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GA20JT12-247

GeneSiC
Part Number GA20JT12-247
Manufacturer GeneSiC
Description Normally - OFF Silicon Carbide Junction Transistor
Published Nov 10, 2015
Detailed Description Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC...
Datasheet PDF File GA20JT12-247 PDF File

GA20JT12-247
GA20JT12-247

Overview
Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Package  RoHS Compliant D GA20JT12-247 VDS RDS(ON) ID (Tc = 25°C) ID (Tc > 125°C) hFE (Tc = 25°C) = = = = = 120...


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