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SPD30N03S2L-10G

Infineon Technologies
Part Number SPD30N03S2L-10G
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 10, 2015
Detailed Description OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent G...
Datasheet PDF File SPD30N03S2L-10G PDF File

SPD30N03S2L-10G
SPD30N03S2L-10G

Overview
OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package SPD30N03S2L-10G PG-TO252-3 Marking 2N03L10 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C ID Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipati...


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