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IPI80N06S3L-06

Infineon Technologies
Part Number IPI80N06S3L-06
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 12, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C ...
Datasheet PDF File IPI80N06S3L-06 PDF File

IPI80N06S3L-06
IPI80N06S3L-06

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.
6 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N06L06 3N06L06 3N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T C=25 °C I D=40 A Avalanche current, single pulse I AS Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 455 80 ±16 136 -55 .
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