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IPI037N08N3G

Infineon Technologies
Part Number IPI037N08N3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 13, 2015
Detailed Description OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC...
Datasheet PDF File IPI037N08N3G PDF File

IPI037N08N3G
IPI037N08N3G

Overview
OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Product Summary V DS R DS(on),max ID 80 V 3.
5 mΩ 100 A Type IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Package Marking PG-TO220-3 037N08N PG-TO262-3 037N08N PG-TO263-3 035N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse3) ID I D,pulse E AS T C=25 °C2) T C=100 °C T C=25 °C I D=100 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic categor...


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