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IPW90R1K0C3

Part Number	IPW90R1K0C3
Manufacturer	Infineon Technologies
Description	Power-Transistor
Published	Nov 13, 2015
Detailed Description	CoolMOS™ Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capabilit...
Datasheet	IPW90R1K0C3 PDF File

Overview

CoolMOS™ Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge IPW90R1K0C3 Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 V 1.
0 Ω 34 nC PG-TO247 CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Type IPW90R1K0C3 Package PG-TO247 Marking 9R1K0C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID Pulsed drain current 2) Avalanche energy, single pulse Avalanche energy, repetitive t AR 2),3) Avalanche current, repetitive t AR 2),3) MOSFET dv /dt ruggedness I D,pulse E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=1.
1 A, V DD=50 V I D=1.
1 A, V DD=50 V V DS=0.
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400 V static AC (f>1 Hz)...

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IPW90R1K0C3 Power-Transistor - Infineon Technologies

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