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SiHFZ14S

Vishay
Part Number SiHFZ14S
Manufacturer Vishay
Description Power MOSFET
Published Nov 19, 2015
Detailed Description IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) ...
Datasheet PDF File SiHFZ14S PDF File

SiHFZ14S
SiHFZ14S

Overview
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) 60 VGS = 10 V 11 Qgs (nC) 3.
1 Qgd (nC) 5.
8 Configuration Single 0.
20 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
D2PAK (TO-263) SiHFZ14S-GE3 IRFZ14SPbF SiHFZ14S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
The through-hole version (IRFZ14L, SiHFZ44L) is available for low profile applications.
D2PAK (TO-263) SiHFZ14STRL-GE3a IRFZ14STRLPbFa SiHFZ14STL-E3a I2PAK (TO-262) SiHFZ14L-GE3 IRFZ14LPbF SiHFZ14L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 ...


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