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SiHFZ24S

Vishay
Part Number SiHFZ24S
Manufacturer Vishay
Description Power MOSFET
Published Nov 19, 2015
Detailed Description www.vishay.com IRFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs ...
Datasheet PDF File SiHFZ24S PDF File

SiHFZ24S
SiHFZ24S

Overview
www.
vishay.
com IRFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.
8 11 Single 0.
10 D D2PAK (TO-263) G GD S S N-Channel MOSFET FEATURES • Advanced process technology • Surface mount (IRFZ24S, SiHFZ24S) • 175 °C operating temperature • Fast switching Available • Material categorization:  for definitions of compliance please see www.
vishay.
com/doc?99912 Available Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
 Please see the information / tables in this datasheet for details.
DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
 The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4.
It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
D2PAK (TO-263) SiHFZ24S-GE3 IRFZ24SPbF - D2PAK (TO-263) SiHFZ24STRR-GE3 IRFZ24STRRPbF IRFZ24STRLPbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a, e Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Aval...


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