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SMD10P06

Temic
Part Number SMD10P06
Manufacturer Temic
Description P-Channel Enhancement-Mode Transistor
Published Nov 20, 2015
Detailed Description SMD10P06 P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –60 rDS(on) (W) 0.28 @ VGS = 10 V TO-252...
Datasheet PDF File SMD10P06 PDF File

SMD10P06
SMD10P06

Overview
SMD10P06 P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –60 rDS(on) (W) 0.
28 @ VGS = 10 V TO-252 IDa (A) "10 S G Drain Connected to Tab GD S Top View Order Number: SMD10P06 D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb TC = 25_C TC = 100_C Pulsed Drain Current (maximum current limited by package) Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –60 "20 –10 –5.
7 –16 –2.
0 42 2.
0b –55 to 175 Unit V A W _C Thermal Resistance Ratings Parameter Symbol Limit Unit Junction-to-Ambient Free Airb Junction-to-Case RthJA RthJC 60 _C/W 3.
0 Notes: a.
Calculated Rating for TC = 25_C, for comparison purposes only.
This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics).
b.
Surface Mounted on FR4 Board, t v 10 sec.
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600.
Please request FaxBack document #1480.
Siliconix S-46848—Rev.
B, 26-Feb-96 1 SMD10P06 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamica V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = –10 mA VDS = VGS, ID = –10 mA VDS = 0 V, VGS = "20 V VDS = –60 V, VGS = 0 V VDS = –60 V, VGS = 0 V, TJ = 125_C VDS = –60 V, VGS = 0 V, TJ = 175_C VDS = –5 V, VGS = –10 V VGS = –10 V, ID = –3.
0 A VGS = –10 V, ID = –3.
0 A, TJ = 125_C VDS = –10 V, ID = –5.
7 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On De...


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