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SiHFPS29N60L

Vishay
Part Number SiHFPS29N60L
Manufacturer Vishay
Description Power MOSFET
Published Nov 22, 2015
Detailed Description IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qg...
Datasheet PDF File SiHFPS29N60L PDF File

SiHFPS29N60L
SiHFPS29N60L


Overview
IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 220 67 96 Single D 0.
175 SUPER-247TM G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb S D G FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements Available RoHS* COMPLIANT • Enhances dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offer Improved Noise Immunity • Lead (Pb)-free Available APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control Applications SUPER-247TM IRFPS29N60LPbF SiHFPS29N60L-E3 IRFPS29N60L SiHFPS29N60L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
Starting TJ = 25 °C, L = 1.
5 mH, RG = 25 Ω, IAS = 29 A (see fig.
12a).
c.
ISD ≤ 29 A, dI/dt ≤ 830 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91255 S-81359-Rev.
A, 07-Jul-08 LIMIT 600 ± 30 29 18 110 3.
8 570 29 48 480 15 - 55 to + 150 300d 10 1.
1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m www.
vishay.
com 1 IRFPS29N60L, SiHFPS29N60L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Juncti...


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