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APM1105NU

Sinopower
Part Number APM1105NU
Manufacturer Sinopower
Description N-Channel MOSFET
Published Nov 22, 2015
Detailed Description APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.) @ VGS=10V RDS(ON)= 170mW (max.) @ VGS=4.5V · ESD Protected · Reliab...
Datasheet PDF File APM1105NU PDF File

APM1105NU
APM1105NU

Overview
APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.
) @ VGS=10V RDS(ON)= 170mW (max.
) @ VGS=4.
5V · ESD Protected · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description D S G Top View of TO-252-3 D Applications G · Power Management in TV Inverter.
S N-Channel MOSFET Ordering and Marking Information APM1105N Assembly Material Handling Code Temperature Range Package Code Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 175 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device APM1105N U : APM1105N XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev.
A.
4 - March, 2014 1 www.
sinopowersemi.
com APM1105NU Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RqJC Thermal Resistance-Junction to Case RqJA Thermal Resistance-Junction to Ambient EAS Avalanche Energy, Single Pulsed (L=0.
3mH) TC=25°C...


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