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BAV99S

Philips
Part Number BAV99S
Manufacturer Philips
Description High-speed double diode
Published Nov 28, 2015
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAV99S High-speed switching diode arra...
Datasheet PDF File BAV99S PDF File

BAV99S
BAV99S

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAV99S High-speed switching diode array Product specification Supersedes data of 2001 Mar 02 2001 May 14 Philips Semiconductors High-speed switching diode array Product specification BAV99S FEATURES • Small plastic SMD package • High switching speed • Two electrically isolated series configuration arrays • Low capacitance.
APPLICATIONS • General purpose switching in e.
g.
surface mounted circuits.
• Rail to rail (ESD) protection.
DESCRIPTION The BAV99S consists of four single die high speed switching diodes in two electrically isolated series configurations, encapsulated in the small SMD SC-88 (SOT363) plastic package.
PINNING PIN 1 2 3 4 5 6 DESCRIPTION anode (a1) cathode (k2) cathode (k3)/anode (a4) anode (a3) cathode (k4) cathode (k1)/anode (a2) 6 54 654 1 23 Top view MSA370 Marking code: K1.
1 2 3 MBL211 Fig.
1 Simplified outline (SC-88; SOT363) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 1 ms t=1s Ts ≤ 85 °C; note 1 Note 1.
Solder points at pins: 2, 3, 5 and 6.
MIN.
MAX.
UNIT − 85 V − 75 V − 200 mA − 450 mA − 4.
5 A −1A − 0.
5 A − 250 mW −65 +150 °C −65 +150 °C 2001 May 14 2 Philips Semiconductors High-speed switching diode array Product specification BAV99S ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS Per diode VF forward voltage see Fig.
3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.
5 VR = 75 V VR = 25 V; Tj = 150 °C VR = 75 V; Tj = 150 °C Cd diode capacitance VR = 0; f...


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