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QM4803S

UBIQ
Part Number QM4803S
Manufacturer UBIQ
Description N-Ch and P-Ch Fast Switching MOSFETs
Published Dec 19, 2015
Detailed Description QM4803S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM4803S is the highest performance trench N-ch and...
Datasheet PDF File QM4803S PDF File

QM4803S
QM4803S

Overview
QM4803S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM4803S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM4803S meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 40V -40V RDSON 26mΩ 40mΩ ID 7.
2A -6.
5A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter SOP8 Pin Configuration D1 D1 D2 D2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range S1 G1S2 G2 Rating N-Ch P-Ch 40 -40 ±20 ±20 7.
2 -6.
5 5.
6 -5.
1 14.
5 -13 28 66 17.
8 -27.
2 2.
5 3.
1 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 1 Typ.
----- Max.
85 50 Unit ℃/W ℃/W Rev A.
01 D042810 QM4803S N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Tr...


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