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QM6013D

UBIQ
Part Number QM6013D
Manufacturer UBIQ
Description P-Ch 60V Fast Switching MOSFETs
Published Dec 21, 2015
Detailed Description QM6013D P-Ch 60V Fast Switching MOSFETs General Description The QM6013D is the highest performance trench P-ch MOSFETs ...
Datasheet PDF File QM6013D PDF File

QM6013D
QM6013D

Overview
QM6013D P-Ch 60V Fast Switching MOSFETs General Description The QM6013D is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM6013D meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -60V RDSON 85mΩ ID -13A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter TO252 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range S G Rating -60 ±20 -13 -8.
3 -3.
3 -2.
7 -26 44 24.
4 31.
3 2 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 1 Typ.
----- Max.
62 4 Unit ℃/W ℃/W Rev A.
01 D051010 QM6013D P-Ch 60V Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leaka...


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