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Si6459BDQ

Vishay
Part Number Si6459BDQ
Manufacturer Vishay
Description P-Channel 60 V (D-S) MOSFET
Published Dec 23, 2015
Detailed Description P-Channel 60 V (D-S) MOSFET Si6459BDQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.115 at VGS = - 10...
Datasheet PDF File Si6459BDQ PDF File

Si6459BDQ
Si6459BDQ

Overview
P-Channel 60 V (D-S) MOSFET Si6459BDQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.
115 at VGS = - 10 V 0.
150 at VGS = - 4.
5 V ID (A) - 2.
7 - 2.
4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S* TSSOP-8 D1 S2 S3 G4 Si6459BDQ 8D 7S 6S 5D Top View Ordering Information: Si6459BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 2.
7 - 2.
2 - 2.
2 - 1.
8 Pulsed Drain Current (10 µs Pulse Width) IDM - 20 Continuous Source Current (Diode Conduction)a IS - 1.
25 - 0.
83 Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS 15 11 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.
50 1.
0 1.
0 0.
67 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a.
Surface mounted on 1" x 1" FR4 board.
t  10 s Steady State Steady State Symbol RthJA RthJF Typical 66 100 50 Maximum 83 120 60 Unit °C/W Document Number: 72518 S10-2138-Rev.
C, 20-Sep-10 www.
vishay.
com 1 Si6459BDQ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V VDS = - 60 V, VGS = 0 V, TJ = 70 °C On-State Drain Currenta ID(on) VDS  - 5 V, VGS = - 10 V Drain-Source On-State Resistancea RDS(on) VGS  - 10 V, ID = - 2.
7 A VGS = - 4.
5 V, ID = - 2.
4 A Forward Transconductancea gfs VDS = - 15 V, ID = - 2.
7 A Diode For...


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