Power MOSFET
Description
PD -95993
IRF7555PbF
l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free
S1 G1 S2 G2
Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a...
Similar Datasheet
