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IRF7343QPbF

International Rectifier
Part Number IRF7343QPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 28, 2015
Detailed Description PD - 96110A l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Ava...
Datasheet PDF File IRF7343QPbF PDF File

IRF7343QPbF
IRF7343QPbF

Overview
PD - 96110A l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
IRF7343QPBF HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 N-Ch P-Ch G1 2 S2 3 7 D1 VDSS 55V -55V 6 D2 ...


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