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QM3015D

UBIQ
Part Number QM3015D
Manufacturer UBIQ
Description P-Ch 30V Fast Switching MOSFETs
Published Jan 1, 2016
Detailed Description QM3015D General Description The QM3015D is the highest performance trench P-ch MOSFETs with extreme high cell density ,...
Datasheet PDF File QM3015D PDF File

QM3015D
QM3015D


Overview
QM3015D General Description The QM3015D is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM3015D meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available P-Ch 30V Fast Switching MOSFETs Product Summery BVDSS -30V RDSON 10.
5mΩ ID -57A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch TO252 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range GDS Rating 10s Steady State -30 ±20 -57 -36 -17.
8 -11.
3 -14.
2 -9 -180 408 -55.
4 52.
1 52 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 1 Typ.
------- Max.
62 25 2.
4 Unit ℃/W ℃/W ℃/W Rev A.
01 D021511 QM3015D P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leaka...


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