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QM3203S

UBIQ
Part Number QM3203S
Manufacturer UBIQ
Description Dual P-Ch 30V Fast Switching MOSFETs
Published Jan 1, 2016
Detailed Description QM3203S Dual P-Ch 30V Fast Switching MOSFETs General Description The QM3203S is the highest performance trench P-ch MOS...
Datasheet PDF File QM3203S PDF File

QM3203S
QM3203S


Overview
QM3203S Dual P-Ch 30V Fast Switching MOSFETs General Description The QM3203S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM3203S meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -30V RDSON 25mΩ ID -6.
5A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOP8 Pin Configuration D1 D1 D2 D2 Absolute Maximum Ratings S1 G1S2 G2 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating -30 ±20 -6.
5 -5.
2 -26 176 -38 1.
5 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ.
----- Max.
85 25 Unit ℃/W ℃/W Rev A.
02 D051011 1 QM3203S Dual P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (-4.
5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Ti...


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