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A2183

Toshiba
Part Number A2183
Manufacturer Toshiba
Description Silicon PNP Epitaxial Type Transistor
Published Jan 5, 2016
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Low collector-emitter satura...
Datasheet PDF File A2183 PDF File

A2183
A2183

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Low collector-emitter saturation : VCE(sat) = −1.
0 V（max） 2SA2183 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage VEBO −7 V Collector current DC Pulse IC ICP −5.
0 −8.
0 A A Base current IB −0.
5 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC Tj Tstg 2 20 150 −55 to 150 W W °C °C 1 : Base 2 : Collector 3 : Emitter JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high JEI...


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