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Si6473DQ

Vishay
Part Number Si6473DQ
Manufacturer Vishay
Description P-Channel MOSFET
Published Jan 7, 2016
Detailed Description P-Channel 20-V (D-S) MOSFET Si6473DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0125 at VGS = - 4.5 V -...
Datasheet PDF File Si6473DQ PDF File

Si6473DQ
Si6473DQ

Overview
P-Channel 20-V (D-S) MOSFET Si6473DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
0125 at VGS = - 4.
5 V - 20 0.
016 at VGS = - 2.
5 V 0.
0215 at VGS = - 1.
8 V ID (A) - 9.
5 - 8.
5 - 7.
3 FEATURES • Halogen-free • TrenchFET® Power MOSFETs S* RoHS COMPLIANT TSSOP-8 D1 S2 S3 G4 Si6473DQ 8D 7S 6S 5D Top View Ordering Information: Si6473DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 9.
5 - 5.
9 - 6.
2 - 4.
9 Pulsed Drain Current (10 µs Pulse Width) IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.
5 - 0.
95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.
75 1.
08 1.
14 0.
69 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A ...


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