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SiSA12DN

Vishay
Part Number SiSA12DN
Manufacturer Vishay
Description N-Channel 30 V (D-S) MOSFET
Published Jan 8, 2016
Detailed Description New Product N-Channel 30 V (D-S) MOSFET SiSA12DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.0043...
Datasheet PDF File SiSA12DN PDF File

SiSA12DN
SiSA12DN

Overview
New Product N-Channel 30 V (D-S) MOSFET SiSA12DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.
) 0.
0043 at VGS = 10 V 30 0.
0060 at VGS = 4.
5 V ID (A)a, g 25 25 Qg (Typ.
) 13.
6 nC PowerPAK® 1212-8 3.
3 mm D 8D 7 D 6 D 5 S 1S 3.
3 mm 2 S 3 G 4 Bottom View Ordering Information: SiSA12DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen IV Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supplies • Personal Computers and Servers • Telecom Bricks • VRM’s and POL D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanc...


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