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PH6030L

NXP
Part Number PH6030L
Manufacturer NXP
Description N-channel TrenchMOS logic level FET
Published Jan 8, 2016
Detailed Description PH6030L N-channel TrenchMOS logic level FET Rev. 01 — 29 July 2008 Product data sheet 1. Product profile 1.1 General ...
Datasheet PDF File PH6030L PDF File

PH6030L
PH6030L

Overview
PH6030L N-channel TrenchMOS logic level FET Rev.
01 — 29 July 2008 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.
2 Features and benefits „ Lead-free package „ Logic level compatibile „ Optimized for use in DC-to-DC converters „ Very low switching and conduction losses 1.
3 Applications „ DC-to-DC convertors „ Notebook computers „ Switched-mode power supplies „ Voltage regulators 1.
4 Quick reference data Table 1.
Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Dynamic characteristics QGD gate-drain charge VGS = 4.
5 V; ID = 25 A; VDS = 12 V; see Figure 11; see Figure 12 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9; see Figure 10 Min Typ Max Unit - - 30 V - -...


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