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RP1E100XN

Rohm
Part Number RP1E100XN
Manufacturer Rohm
Description N-Channel MOSFET
Published Jan 12, 2016
Detailed Description 4V Drive Nch MOSFET RP1E100XN  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Prote...
Datasheet PDF File RP1E100XN PDF File

RP1E100XN
RP1E100XN

Overview
4V Drive Nch MOSFET RP1E100XN  Structure Silicon N-channel MOSFET Features 1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
 Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E100XN Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch 30 20 10 36 1.
6 36 2.
0 150 Range of storage temperature Tstg 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Moun...


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