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IRL3714ZL

International Rectifier
Part Number IRL3714ZL
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 13, 2016
Detailed Description Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IR...
Datasheet PDF File IRL3714ZL PDF File

IRL3714ZL
IRL3714ZL

Overview
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET® Power MOSFET VDSS RDS(on) max Qg 20V 16m: 4.
8nC Benefits l Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3714Z D2Pak IRL3714ZS TO-262 IRL3714ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case eCase-to-Sink, Flat Greased Surface eÃJunction-to-Ambient hJunction-to-Ambient (PCB Mount) Notes  through † are on page 12 www.
irf.
com Max.
20 ± 20 36g 25g 140 35 18 0.
23 -55 to + 175 300 (1.
6mm from case) Typ.
––– 0.
50 ––– ––– Max.
4.
3 ––– 62 40 Units V A W W/°C °C Units °C/W 1 10/8/03 IRL3714Z/ZS/ZL Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current 20 ––– ––– ––– 1.
65 ––– ––– ––– 0.
015 13 21 2.
1 -5.
2 ––– ––– ––– 16 26 2.
55 ––– 1.
0 V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA emΩ VGS = 10V, ID = 15A eVGS = 4.
5V, ID = 12A V VDS = VGS, ID = 250µA mV/°C µA VDS = 16V, VGS = 0V ––– ––– 150 VDS = 16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance Qg Total Gate Charge 21 ––– ––– ––– 4.
8 7.
2 S VDS = 1...


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