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IRFB4215PbF

International Rectifier
Part Number IRFB4215PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 13, 2016
Detailed Description PD - 95757A IRFB4215PbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operati...
Datasheet PDF File IRFB4215PbF PDF File

IRFB4215PbF
IRFB4215PbF

Overview
PD - 95757A IRFB4215PbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 9.
0mΩ G ID = 115Aˆ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
TO-220AB Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current ...


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