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IRF4104PbF

International Rectifier
Part Number IRF4104PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 14, 2016
Detailed Description PD - 95468 AUTOMOTIVE MOSFET IRF4104PbF IRF4104SPbF Features l Advanced Process Technology l Ultra Low On-Resistance ...
Datasheet PDF File IRF4104PbF PDF File

IRF4104PbF
IRF4104PbF

Overview
PD - 95468 AUTOMOTIVE MOSFET IRF4104PbF IRF4104SPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings IRF4104LPbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 5.
5mΩ S ID = 75A TO-220AB IRF4104 D2Pak IRF4104S TO-262 IRF4104L Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max.
120 84 75 470 140 Units A W Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range 0.
95 ± 20 120 220 See Fig.
12a, 12b, 15, 16 -55 to + 175 W/°C V mJ A mJ °C Soldering Temperature, for 10 seconds iMounting Torque, 6-32 or M3 screw Thermal Resistance 300 (1.
6mm from case ) y y10 lbf in (1.
1N m) Parameter Typ.
Max.
Units RθJC RθCS RθJA RθJA Junction-to-Case iCase-to-Sink, Flat Greased Surface iJunction-to-Ambient jJunction-to-Ambient (PCB Mount) ––– 1.
05 °C/W 0.
50 ––– ––– 62 ––– 40 1 IRF4104S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Dra...


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