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FDC6432SH

Fairchild Semiconductor
Part Number FDC6432SH
Manufacturer Fairchild Semiconductor
Description 12V P-Channel PowerTrench MOSFET
Published Jan 14, 2016
Detailed Description FDC6432SH April 2003 FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET General Description Featu...
Datasheet PDF File FDC6432SH PDF File

FDC6432SH
FDC6432SH

Overview
FDC6432SH April 2003 FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET General Description Features This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for providing an extremely low RDS(ON) in a small package.
Applications DC/DC converter Power management • SyncFET 2.
4 A, 30V RDS(ON) = 90 mΩ @ VGS = 10 V RDS(ON) = 105 mΩ @ VGS = 4.
5 V • P channel –2.
5 A, –12V R RDS(ON) = 90 mΩ @ VGS = –4.
5 V RDS(ON) = 125 mΩ @ VGS = –2.
5 V RDS(ON) = 220 mΩ @ VGS = –1.
8 V • Fast switching speed.
• High performance trench technology for extremely low RDS(ON) D2 S1 D1 SuperSOT TM-6 Pin 1 G2 S2 G1 SuperSOT™-6 D1,2 4 S1 5 D1,2 6 Q2(P) 3 G2 2 S2 1 Q1(N) G1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current– Continuous (Note 1a) – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size .
432 FDC6432SH 7’’ Ratings Q1 (N) 30 Q2 (P) –12 ±16 ±8 2.
4 –2.
5 7 –7 1.
3 0.
7 –55 to +150 Units V V A W °C 100 °C/W 175 60 Tape width 8mm Quantity 3000 units 2003 Fairchild Semiconductor Corp.
FDC6432SH Rev B (W) FDC6432SH Electrical CharacteristicsTA = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate-Body Leakage On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature...


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