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MTP2N40E

ON Semiconductor
Part Number MTP2N40E
Manufacturer ON Semiconductor
Description Power Field Effect Transistor
Published Jan 14, 2016
Detailed Description MTP2N40E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This...
Datasheet PDF File MTP2N40E PDF File

MTP2N40E
MTP2N40E

Overview
MTP2N40E Designer’s™ Data Sheet TMOS E−FET.
™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.
com TMOS POWER FET 2.
0 AMPERES, 400 VOLTS RDS(on) = 3.
5 W TO−220AB CASE 221A−06 Style 5 D ®G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage — Continuous Gate−Source Voltage — Non−Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 400 400 ± 20 ± 40 2.
0 1.
5 6.
0 40 0.
32 Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.
0 Apk, L = 10 mH, RG = 25 Ω) EAS 45 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient RθJC RθJA 3.
13 °C/W 62.
5 Maximum Lead Temperature for Soldering Purpo...


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