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NDTL01N60Z

ON Semiconductor
Part Number NDTL01N60Z
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 20, 2016
Detailed Description NDDL01N60Z, NDTL01N60Z N-Channel Power MOSFET 600 V, 15 W Features • 100% Avalanche Tested • Gate Charge Minimized • Ze...
Datasheet PDF File NDTL01N60Z PDF File

NDTL01N60Z
NDTL01N60Z

Overview
NDDL01N60Z, NDTL01N60Z N-Channel Power MOSFET 600 V, 15 W Features • 100% Avalanche Tested • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady State, TC = 25°C (Note 1) Continuous Drain Current Steady State, TC = 100°C (Note 1) Power Dissipation Steady State, TC = 25°C Pulsed Drain Current, tp = 10 ms Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (ID = 0.
8 A) Peak Diode Recovery (Note 2) VDSS VGS ID ID PD IDM IS EAS dv/dt 600 ±30 0.
8 0.
25 V V A 0.
5 0.
15 A 26 2 W 3.
4 2.
5 1.
7 12 A A mJ 4.
5 V/ns Lead Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits ar...


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