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CEB20P10

Part Number	CEB20P10
Manufacturer	CET
Description	P-Channel Enhancement Mode Field Effect Transistor
Published	Jan 24, 2016
Detailed Description	CEP20P10/CEB20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -20A, RDS(ON) =130mΩ...
Datasheet	CEB20P10 PDF File

Overview

CEP20P10/CEB20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -20A, RDS(ON) =130mΩ @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -100 ±20 -20 -80 115 0.
77 Single Pulsed Avalanche Energy e EAS 162 Single Pulsed Av...

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