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ECH8697R

ON Semiconductor
Part Number ECH8697R
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 25, 2016
Detailed Description MOSFET – Power, Dual, N-Channel, For 1-2 Cells Lithium-ion Battery Protection 24 V, 11.6 mW, 10 A, ECH8697R Description...
Datasheet PDF File ECH8697R PDF File

ECH8697R
ECH8697R

Overview
MOSFET – Power, Dual, N-Channel, For 1-2 Cells Lithium-ion Battery Protection 24 V, 11.
6 mW, 10 A, ECH8697R Description This Power MOSFET features a low on−state resistance.
This device is suitable for applications such as power switches of portable machines.
Best suited for 1−2 cells Lithium−ion Battery applications.
Features • Low On−Resistance • 2.
5 V Drive • Common−Drain Type • ESD Diode−Protected Gate • Built−in Gate Protection Resistor • These Devices are Pb−Free and are RoHS Compliant Typical Applications • 1−2 cells Lithium−ion Battery Charging and Discharging Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Symbol Parameter Value Unit VDSS VGSS ID IDP Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% 24 V ±12.
5 V 10 A 60 A PD Power Dissipation Surface mounted on ceramic substrate (1000 mm2 x 0.
8 mm) 1 unit 1.
5 W PT Total Dissipation Surface mounted on ceramic substrate (1000 mm2 x 0.
8 mm) 1.
6 W Tj Junction Temperature 150 °C Tstg Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.
onsemi.
com VDSS 24 V RDS(on) Max 11.
6 mW @ 4.
5 V 12.
6 mW @ 4.
0 V 15 mW @ 3.
1 V 17.
5 mW @ 2.
5 V ID Max 10 A ELECTRICAL CONNECTION N−Channel 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 1 2 3 4 SOT−28FL/ECH8 CASE 318BF MARKING DIAGRAM UU ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet.
THERMAL CHARACTERISTICS Symbol Parameter RθJA Junction to Ambient Surface mounted on ceramic substrate (1000 mm2 x 0.
8 mm) 1 unit © Semiconductor Components Industries, LLC, 2013 1 November, 2022 − Rev 4 Value 83.
3 Unit °C/W Publication Order Number: ECH8697R/D ECH8697R ELECTR...


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