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NCE5558K

NCE Power Semiconductor
Part Number NCE5558K
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published Jan 25, 2016
Detailed Description http://www.ncepower.com Pb Free Product NCE5558K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5558K ...
Datasheet PDF File NCE5558K PDF File

NCE5558K
NCE5558K

Overview
http://www.
ncepower.
com Pb Free Product NCE5558K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =55V,ID =58A RDS(ON) < 13mΩ @ VGS=10V (Typ:10.
5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Synchronous rectifiers for, industrial power supplies ● LED backlighting Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE5558K NCE5558K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Operating Junction and Storage Temperature Range TJ,TSTG Limit 55 ±20 58 41 100 80 0.
64 -55 To 150 Unit V V A A A W W/℃ ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.
6 ℃/W Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE5558K Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=55V,VGS=0V VGS=±20V,VDS=0V 55 - - V - - 1 μA - - ±100 nA Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=10V, ID=20A VDS=5V,ID=20A 23 - 10.
5 30 - 4 13 - V mΩ S Input Capacitance Output Capacitance Reverse Transfer ...


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