DatasheetsPDF.com

TF256TH

ON Semiconductor
Part Number TF256TH
Manufacturer ON Semiconductor
Description N-Channel JFET
Published Jan 25, 2016
Detailed Description Ordering number : ENA1617B TF256TH N-Channel JFET 20V, 140 to 450μA, 1.7mS, VTFP http://onsemi.com Features • High ga...
Datasheet PDF File TF256TH PDF File

TF256TH
TF256TH


Overview
Ordering number : ENA1617B TF256TH N-Channel JFET 20V, 140 to 450μA, 1.
7mS, VTFP http://onsemi.
com Features • High gain : GV=2.
7dB typ (VCC=2V, RL=2.
2kΩ, Cin=5pF, VIN=10mV, f=1kHz) • Ultrasmall package facilitates miniaturization in end products • Best suited for use in electret condenser microphone for audio equipments and telephones • Excellent transient characteristics • Adoption of FBET process • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VGDO IG ID PD Tj Storage Temperature Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
LOT No.
LOT No.
RANK Package Dimensions unit : mm (typ) 7031A-001 0.
2 0.
8 0.
2 1.
4 0.
25 0.
1 3 TF256TH-3-TL-H TF256TH-4-TL-H TF256TH-5-TL-H 0 to 0.
02 1 0.
45 2 0.
2 1.
2 0.
34 0.
07 12 3 1 : Drain 2 : Source 3 : Gate VTFP 0.
07 Product & Package Information • Package : VTFP • JEITA, JEDEC : SC-106A • Minimum Packing Quantity : 8,000 pcs.
/reel Packing Type: TL Marking TL Electrical Connection 1 N 3 2 Semiconductor Components Industries, LLC, 2013 August, 2013 91212 TKIM/10511 TKIM TC-00002535/N2509GB TKIM TC-00002097 No.
A1617-1/7 TF256TH Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Symbol V(BR)GDO VGS(off) Conditions IG=--100μA VDS=2V, ID=1μA Drain Current IDSS* VDS=2V, VGS=0V Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance | yfs | Ciss Crss VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz [Ta=25°C, VCC=2.
0V, RL=2.
2kΩ, Cin=5pF, See specified Test Circuit.
] Voltage Gain GV VIN...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)