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PJL9450A

Pan Jit International
Part Number PJL9450A
Manufacturer Pan Jit International
Description 100V N-Channel Enhancement Mode MOSFET
Published Jan 26, 2016
Detailed Description PPJL9450A 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 2.7 A SOP-8 Features  RDS(ON), VGS@10V,ID@...
Datasheet PDF File PJL9450A PDF File

PJL9450A
PJL9450A

Overview
PPJL9450A 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 2.
7 A SOP-8 Features  RDS(ON), VGS@10V,ID@2.
7A<152mΩ  RDS(ON), VGS@4.
5V,ID@2.
5A<158mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data  Case: SOP-8 package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx.
Weight: 0.
0029 ounces, 0.
083 grams  Marking: L9454A Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25oC TA=70oC Pulsed Drain Current (Note 1) Power Dissipation TA=25oC TA=70oC Single Pulse Avalanche Energy (Note 5 ) Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient, t≦10s (Note 6) SYMBOL VDS VGS ID IDM PD EAS TJ,TSTG RθJA LIMIT 100 +20 2.
7 2.
1 10.
8 2.
5 1.
6 1.
3 -55~150 50 UNITS V V A A W mJ oC oC/W July 10,2015-REV.
00 Page 1 PPJL9450A Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS TEST CONDITION VGS=0V,ID=250uA VDS=VGS,ID=250uA VGS=10V,ID=2.
7A VGS=4.
5V,ID=2.
5A VDS=80V,VGS=0V VGS=+20V,VDS=0V VDS=60V, ID=2.
7A, VGS=10V (Note 2,3) VDS=25V, VGS=0V, f=1.
0MHZ VDS=50V,RL=18.
5Ω, VGS=10V, RG=6Ω (Note 2,3) --- Diode Forward Voltage VSD IS=1.
0A, VGS=0V MIN.
TYP.
MAX.
UN...


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