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CS8N60FA9H

HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET


Description
Silicon N-Channel Power MOSFET CS8N60F A9H ○R General Description: CS8N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 8 45 0.8 performance and enhance the avalanche energy. The transistor can be used in various pow...



HUAJING MICROELECTRONICS

CS8N60FA9H

PDF File CS8N60FA9H PDF File


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