Power LDMOS transistor
Description
BLF182XR; BLF182XRS
Power LDMOS transistor
Rev. 1 — 23 July 2015
Objective data sheet
1. Product profile
1.1 General description
A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 250
Gp (dB) 28...
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