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BLF2324M8LS200P

NXP
Part Number BLF2324M8LS200P
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF2324M8LS200P Power LDMOS transistor Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General descrip...
Datasheet PDF File BLF2324M8LS200P PDF File

BLF2324M8LS200P
BLF2324M8LS200P

Overview
BLF2324M8LS200P Power LDMOS transistor Rev.
1 — 3 June 2014 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2300 to 2400 1740 28 60 17.
2 32 37 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
2 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent therm...


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