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BLF574XR

NXP
Part Number BLF574XR
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF574XR; BLF574XRS Power LDMOS transistor Rev. 1 — 20 June 2013 Product data sheet 1. Product profile 1.1 General d...
Datasheet PDF File BLF574XR PDF File

BLF574XR
BLF574XR

Overview
BLF574XR; BLF574XRS Power LDMOS transistor Rev.
1 — 20 June 2013 Product data sheet 1.
Product profile 1.
1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.
This product is an enhanced version of the BLF574 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
Table 1.
Application information Test signal f (MHz) CW 225 pulsed RF 225 VDS PL Gp (V) (W) (dB) 50 600 23.
5 50 600 24 D (%) 74.
5 74.
7 1.
2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLF574XR; BLF574XRS Power LDMOS transistor 2.
Pinning information Table 2.
Pinning Pin Description BLF574XR (SOT1214A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF574XRS (SOT1214B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange.
3.
Ordering information Simplified outline Graphic symbol  1   3 [1] 4 5 2 sym117  [1]  1 3 5 4 2 sym117 Table 3.
Ordering information Type number Package Name Description BLF574XR - flanged ceramic package; 2 mounting holes; 4 leads BLF574XRS - earless flanged ceramic package; 4 leads Version SOT1214A SOT1214B 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature Min 6 65 [1] - Max 110 +11 +150 225 Unit V V C C [1] Continuous use at maximum temperature will affect the reliability.
For details refer to the on-line MTF c...


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