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BLF9G38LS-90P

Part Number	BLF9G38LS-90P
Manufacturer	NXP
Description	Power LDMOS transistor
Published	Jan 27, 2016
Detailed Description	BLF9G38LS-90P Power LDMOS transistor Rev. 2 — 3 July 2015 Product data sheet 1. Product profile 1.1 General descripti...
Datasheet	BLF9G38LS-90P PDF File

Overview

BLF9G38LS-90P Power LDMOS transistor Rev.
2 — 3 July 2015 Product data sheet 1.
Product profile 1.
1 General description 90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit.
Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) IS-95 3400 to 3600 28 15.
1 12.
7 37.
0 ACPR (dBc) 37 [1] [1] Test signal: IS-95; pilot, paging, sync, 6 traffic channels with Walsh codes 8  13; PAR = 9.
7 dB at 0.
01 % probability.
1.
2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent ther...

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