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IRHMS57163SE

Part Number	IRHMS57163SE
Manufacturer	International Rectifier
Description	RADIATION HARDENED POWER MOSFET
Published	Jan 27, 2016
Detailed Description	PD-95840A IRHMS57163SE RADIATION HARDENED JANSR2N7475T1 POWER MOSFET 130V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA...
Datasheet	IRHMS57163SE PDF File

Overview

PD-95840A IRHMS57163SE RADIATION HARDENED JANSR2N7475T1 POWER MOSFET 130V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/685 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57163SE 100K Rads (Si) 0.
0155Ω 45A* JANSR2N7475T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Req...

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IRHMS57163SE RADIATION HARDENED POWER MOSFET - International Rectifier

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