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PMV130ENEA

NXP
Part Number PMV130ENEA
Manufacturer NXP
Description N-channel Trench MOSFET
Published Jan 28, 2016
Detailed Description SOT23 PMV130ENEA 40 V, N-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description N-channel enhan...
Datasheet PDF File PMV130ENEA PDF File

PMV130ENEA
PMV130ENEA

Overview
SOT23 PMV130ENEA 40 V, N-channel Trench MOSFET 12 June 2014 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • 1 kV ESD protected • AEC-Q101 qualified 3.
Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 1.
5 A; Tj = 25 °C Min Typ Max Unit - - 40 V -20 - 20 V [1] - - 2.
1 A - 95 120 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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