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1SV160

Toshiba Semiconductor
Part Number 1SV160
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV160 AFC Application for FM Receiver · Small package...
Datasheet PDF File 1SV160 PDF File

1SV160
1SV160

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV160 AFC Application for FM Receiver · Small package.
· Low series resistance: rs = 0.
7 Ω (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 15 125 -55~125 Unit V °C °C 1SV160 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse current Reverse voltage Total capacitance Capacitance ratio Series resistance Symbol Test Condition IR VR CT C2 V/C4 V rs VR = 4 V IR = 10 mA VR = 4 V, f = 1 MHz ¾ VR = 4 V, f = 50 MHz Marking JEDEC ― JEITA SC-59 TOSHIBA 1-3G1A Weight: 0.
012 g (typ.
) Min Typ.
Max Unit ¾ ¾ 1...


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