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8N60-E

Unisonic Technologies
Part Number 8N60-E
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Jan 29, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 8N60-E Preliminary 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60-E is a ...
Datasheet PDF File 8N60-E PDF File

8N60-E
8N60-E

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 8N60-E Preliminary 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
 FEATURES * RDS(ON) < 1.
4Ω@VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 8N60L-TF1-T 8N60G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube  MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-A86.
b 8N60-E Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 8A 8A 32 A 160 mJ 14.
7 mJ 4.
5 V/ns Power Dissipation Junction Temperature PD 48 W TJ +150 °C Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °C °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited by TJ 3.
L = 5mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4.
ISD ≤7.
5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATI...


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