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IRFR2607ZPbF

Part Number	IRFR2607ZPbF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Jan 30, 2016
Detailed Description	PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operatin...
Datasheet	IRFR2607ZPbF PDF File

Overview

PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 22mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
S ID = 42A D-Pak I-Pak IRFR2607ZPbF IRFU2607ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max.
45 32 42 180 110 Units A W Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÃIAR Avalanche Current gEAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range 0.
72 ± 20 96 96 See Fig.
12a, 12b, 15, 16 -55 to + 175 W/°C V mJ A mJ °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance 300 (1.
6mm from case ) y y10 lbf in (1.
1N m) Parameter jRθJC ijRθJA jRθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient www.
irf.
com Typ.
––– ––– ––– Max.
1.
38 40 110 Units °C/W 1 09/16/10 IRFR/U2607ZPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate ...

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