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UTD36N03
N-CHANNEL ENHANCEMENT MODE Power MOSFET
Description
UNISONIC TECHNOLOGIES CO., LTD UTD36N03 N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) < 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD36N03L-TA3-T UTD36N03G-TA3-T UTD3...
Unisonic Technologies
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UTD36N03
N-CHANNEL ENHANCEMENT MODE Power MOSFET
- Unisonic Technologies
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