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MAC212A8FP

ON Semiconductor
Part Number MAC212A8FP
Manufacturer ON Semiconductor
Description Triacs
Published Feb 2, 2016
Detailed Description MAC212A6FP, MAC212A8FP, MAC212A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for ful...
Datasheet PDF File MAC212A8FP PDF File

MAC212A8FP
MAC212A8FP

Overview
MAC212A6FP, MAC212A8FP, MAC212A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed.
Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering.
• Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Four Modes • Indicates UL Registered — File #E69369 • Device Marking: Logo, Device Type, e.
g.
, MAC212A6FP, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage(1) (TJ = −40 to +125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC212A6FP MAC212A8FP MAC212A10FP VDRM, VRRM 400 600 800 On-State RMS Current (TC = +85°C)(2) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 12 Unit Volts Amps Peak Non−repetitive Surge Current (One Full Cycle, Sine Wave, 60 Hz, TC = +85°C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.
3 ms) ITSM I2t 100 Amps 40 A2s Peak Gate Power (TC = +85°C, Pulse Width = 10 μs) Average Gate Power (TC = +85°C, t = 8.
3 ms) Peak Gate Current (TC = +85°C, Pulse Width = 10 μs) RMS Isolation Voltage Relative Humidity p (2T0A%=)25(°C, ) PGM PG(AV) IGM V(ISO) 20 0.
35 2.
0 1500 Watts Watt Amps Volts Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to °C +150 (1) VDRM and VRRM for all types can be applied on a continuous basis.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all...


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