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PTVA047002EV

Part Number	PTVA047002EV
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Feb 3, 2016
Detailed Description	PTVA047002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz Description The PTVA047002EV LDMOS ...
Datasheet	PTVA047002EV PDF File

Overview

PTVA047002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz Description The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.
Features include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA047002EV Package H-36275-4 Drain Efficiency (%), Gain (dB) DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.
2 A, POUT = 135 W avg 34 30 Drain Efficiency 26 22 18 Gain 14 ptva047002ev_g5 450 500 550 600 650 700 750 800 850 Frequency (...

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PTVA047002EV Thermally-Enhanced High Power RF LDMOS FET - Infineon

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