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PXAC192908FV

Part Number	PXAC192908FV
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Feb 3, 2016
Detailed Description	PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz Description The PXAC192908FV is a...
Datasheet	PXAC192908FV PDF File

Overview

PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz Description The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band.
Features include dual-path design, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC192908FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.
84 MH...

Similar Datasheet

PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET - Infineon

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