DatasheetsPDF.com

AUIRFL024N

International Rectifier
Part Number AUIRFL024N
Manufacturer International Rectifier
Description Power MOSFET
Published Feb 4, 2016
Detailed Description AUTOMOTIVE GRADE AUIRFL024N Features • Advanced Planar Technology • Low On-Resistance • Dynamic dV/dT Rating • 150°C O...
Datasheet PDF File AUIRFL024N PDF File

AUIRFL024N
AUIRFL024N


Overview
AUTOMOTIVE GRADE AUIRFL024N Features • Advanced Planar Technology • Low On-Resistance • Dynamic dV/dT Rating • 150°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified* Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET D V(BR)DSS 55V G RDS(on) max.
75mΩ S ID 2.
8A G Gate D S D G SOT-223 AUIRFL024N D Drain S Source Base part number AUIRFL024N Package Type SOT-223 Standard Pack Form Quantity Tube 95 Tape and Reel 2500 Orderable Part Number AUIRFL024N AUIRFL024NTR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max.
Units ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C hContinuous Drain Current, VGS @ 10V gContinuous Drain Current, VGS @ 10V gContinuous Drain Current, VGS @ 10V ™Pulsed Drain Current hPower Dissipation (PCB Mount) gPower Dissipation (PCB Mount) gLinear Derating Factor (PCB Mount) 4.
0 2.
8 2.
3 11.
2 2.
1 1.
0 8.
3 A W mW/°C VGS Gate-to-Source Voltage ± 20 ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)