INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 95637A
INSULATED GATE BIPOLAR TRANSISTOR
Features
Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
Industry standard TO-220 Full-Pak Lead-Free
IRG4IBC30SPbF
C
G E
N-channel
VCES = 600V VCE(on...
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